Researchers succeed in the direct bonding of diamond and gallium nitride (GaN) at room temperature and demonstrate that the bond can withstand heat treatments of 1,000 degrees Celsius, making it ideal for the high temperature fabrication process of GaN-based devices. GaN-on-diamond semiconductor material will allow for the next generation of high power, high frequency devices.
from Latest Science News -- ScienceDaily https://ift.tt/3z67g1Q
No comments:
Post a Comment