Columbia Engineering researchers report that they have demonstrated a nearly ideal transistor made from a 2D material stack -- with only a two-atom-thick semiconducting layer -- by developing a completely clean and damage-free fabrication process. Their method shows vastly improved performance compared to 2D semiconductors fabricated with a conventional process, and could provide a scalable platform for creating ultra-clean devices in the future.
from Latest Science News -- ScienceDaily http://bit.ly/2W8gtr3
No comments:
Post a Comment